Title :
A model for the drain current of deep submicrometer MOSFETs including electron-velocity overshoot
Author :
Roldán, J.B. ; Gámiz, F. ; Lopez-Villanueva, J.A. ; Cartujo, P. ; Carceller, J.E.
Author_Institution :
Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain
fDate :
10/1/1998 12:00:00 AM
Abstract :
We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFETs down to 0.07 μm channel lengths both at low and room temperatures
Keywords :
MOSFET; electric current; semiconductor device models; I-V curves; analytical model; circuit simulation; conductances; deep submicron MOSFET; drain current model; electron-velocity overshoot; ultra-short channel MOSFET model; Analytical models; Circuit simulation; Electric variables; Electrons; Fabrication; MOS devices; MOSFET circuits; Semiconductor device modeling; Temperature; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
