Title :
Influence of the doping profile on electron mobility in a MOSFET
Author :
Gámiz, F. ; López-Villanueva, J.A. ; Roldán, J.B. ; Carceller, J.E.
Author_Institution :
Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain
fDate :
11/1/1996 12:00:00 AM
Abstract :
In this work, the actual effect of the doping profile on electron mobility in MOSFET channels has been studied. For this purpose, a one-electron Monte Carlo simulation has been used to calculate the electron mobility. The influence on the mobility of several ion-implanted profiles typical of present technology and of diffused profiles have been compared
Keywords :
MOSFET; Monte Carlo methods; doping profiles; electron mobility; semiconductor device models; semiconductor doping; MOSFET; diffused profiles; doping profile; electron mobility; ion-implanted profiles; one-electron Monte Carlo simulation; Doping profiles; Electron mobility; Ion implantation; MOS devices; MOSFET circuits; Monte Carlo methods; Semiconductor device doping; Semiconductor impurities; Semiconductor process modeling; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
