Title :
A model for mobility degradation in highly doped arsenic layers
Author :
Rousseau, P.M. ; Griffin, P.B. ; Luning, S. ; Plummer, J.D.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
11/1/1996 12:00:00 AM
Abstract :
As arsenic doping concentration increases past the electrical solubility limit, a significant fraction of the arsenic becoming electrically inactive. This inactive arsenic results in an electron mobility degradation. Using laser melt annealing and subsequent deactivation anneals, mobility was studied as a function of active and inactive dose. A model is presented for this effect based on the theory of scattering by neutral defects. Using the model, it is possible to extract active concentration profiles from resistive measurements
Keywords :
Hall mobility; arsenic; doping profiles; electron mobility; elemental semiconductors; heavily doped semiconductors; ion implantation; laser beam annealing; semiconductor device models; silicon; Si:As; active dose; deactivation anneals; doping concentration; electrical solubility limit; electron mobility degradation; inactive dose; laser melt annealing; neutral defect scattering; resistive measurements; Chemical lasers; Degradation; Doping; Electron mobility; Implants; Laser modes; Rapid thermal annealing; Scattering; Semiconductor process modeling; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
