Title :
High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates
Author :
Mishima, Y. ; Yoskino, K. ; Takeuchi, F. ; Ohgata, K. ; Takei, M. ; Sasaki, N.
Author_Institution :
LCD Lab., Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
High-performance CMOS circuits are fabricated from excimer-laser-annealed poly-Si TFTs on a glass substrate (300×300 mm). The propagation delay time of the 121 stage CMOS ring oscillators with 0.5 μm gate length is 0.18 nsec at 5 V supply voltage. The maximum operating frequency of the 40-stage shift registers with 1 μm gate length is 133 MHz at 5 V supply voltage. This value is high enough for peripheral CMOS circuits with line-at-a-time addressing.
Keywords :
CMOS integrated circuits; integrated circuit measurement; integrated circuit technology; laser beam annealing; oscillators; shift registers; thin film transistors; 0.18 ns; 0.5 mum; 1 mum; 121 stage CMOS ring oscillators; 133 MHz; 40-stage shift registers; 5 V; CMOS circuit fabrication; Si-SiO/sub 2/; excimer laser annealing; glass substrates; high-performance CMOS circuits; line-at-a-time addressing; maximum operating frequency; peripheral CMOS circuits; polysilicon TFTs; propagation delay time; supply voltage; Boron; Capacitance; Circuits; Doping; Glass; Plasma temperature; Ring oscillators; Shift registers; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
