Title :
SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax
Author :
Koester, S.J. ; Hammond, R. ; Chu, J.O. ; Mooney, P.M. ; Ott, J.A. ; Perraud, L. ; Jenkins, K.A. ; Webster, C.S. ; Lagnado, I. ; de la Houssaye, P.R.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The dc and microwave results of Si/sub 0.2/Ge/sub 0.8//Si/sub 0.7/Ge/sub 0.3/ pMODFETs grown on silicon-on-sapphire (SOS) substrates by ultrahigh vacuum chemical vapor deposition are reported. Devices with L/sub g/=0.1 μm displayed high transconductance (377 mS/mm), low output conductance (25 mS/mm), and high gate-to-drain breakdown voltage (4 V). The dc current-voltage (I-V) characteristics were also nearly identical to those of control devices grown on bulk Si substrates. Microwave characterization of 0.1×50 μm2 devices yielded unity current gain (fT) and unilateral power gain (fmax) cutoff frequencies as high as 50 GHz and 116 GHz, respectively. Noise parameter characterization of 0.1×90 μm2 devices revealed minimum noise figure (Fmin) of 0.6 dB at 3 GHz and 2.5 dB at 20 GHz.
Keywords :
Ge-Si alloys; chemical vapour deposition; high electron mobility transistors; microwave field effect transistors; semiconductor device breakdown; semiconductor device measurement; semiconductor device noise; semiconductor materials; silicon-on-insulator; vapour phase epitaxial growth; 0.1 mum; 0.6 dB; 116 GHz; 2.5 dB; 25 mS/mm; 3 to 20 GHz; 377 mS/mm; 4 V; 50 GHz; Al/sub 2/O/sub 3/; Si-Al/sub 2/O/sub 3/; Si/sub 0.2/Ge/sub 0.8/-Si/sub 0.7/Ge/sub 0.3/; SiGe pMODFETs; dc current-voltage characteristics; gate-to-drain breakdown voltage; high transconductance; microwave characteristics; minimum noise figure; noise parameter characterization; output conductance; silicon-on-sapphire substrates; ultrahigh vacuum chemical vapor deposition; unilateral power gain cutoff frequency; unity current gain cutoff frequency; Chemical vapor deposition; Epitaxial layers; Germanium silicon alloys; HEMTs; MODFETs; Microwave devices; Noise figure; Silicon germanium; Silicon on insulator technology; Substrates;
Journal_Title :
Electron Device Letters, IEEE
