DocumentCode
1438985
Title
Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs
Author
Babiker, S. ; Asenov, A. ; Cameron, N. ; Beaumont, S.P.
Author_Institution
Nanaoelectron. Res. Centre, Glasgow Univ., UK
Volume
43
Issue
11
fYear
1996
fDate
11/1/1996 12:00:00 AM
Firstpage
2032
Lastpage
2034
Abstract
The contact and external series resistances play an important role in the performance of modern 0.1-0.2 μm HEMT´s. It is not possible to include these resistances directly into the Monte Carlo simulations. Here we describe a simple and efficient way to include the external series resistances into the Monte Carlo results of the intrinsic device simulations. Examples of simulation results are given for a 0.2 μm pseudomorphic HEMT
Keywords
Monte Carlo methods; Schottky gate field effect transistors; contact resistance; electric resistance; high electron mobility transistors; semiconductor device models; 0.1 to 0.2 micron; MESFET; Monte Carlo simulation; PHEMT; contact resistance; external series resistance; pseudomorphic HEMT; Contact resistance; Electrical resistance measurement; Electron devices; HEMTs; MESFETs; MOSFET circuits; Monte Carlo methods; Quantum dots; Silicon; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.543047
Filename
543047
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