A novel infrared microbolometer in standard CMOS-MEMS process

Author

Meng-Lieh Sheu ; Ji-Yi Chen ; Ming-Shang Li ; Lin-Jie Tsao

Author_Institution

Dept. of Electr. Eng., Nat. Chi-Nan Univ., Nantou, Taiwan

fYear

2014

fDate

11-14 April 2014

Firstpage

1

Lastpage

4

Abstract

A novel infrared micro-bolometer realized in CMOS with MEMS post process is proposed. The micro-bolometer is constructed as a metal micro-cavity to enhance its absorptivity of incident infrared energy. Three testkeys with different cavity structure are presented. The measured sensitivity of the testkeys, in the temperature range of 5-75°C, are 9.56 Ω/°C, 8.78 Ω/°C and 9.89 Ω/°C, respectively. The micro-bolometer occupies a chip area of 439×370 μm² in 0.18 μm process. It is suitable for application on smart biomedical sensor.

Keywords

CMOS image sensors; bioMEMS; bolometers; infrared detectors; intelligent sensors; microcavities; microsensors; temperature sensors; MEMS post process; cavity structure; chip area; incident infrared energy absorptivity; infrared microbolometer; metal microcavity; size 0.18 mum; smart biomedical sensor; standard CMOS-MEMS process; temperature 5 degC to 75 degC; testkeys; Bolometers; Cavity resonators; Electrical resistance measurement; Metals; Semiconductor device measurement; Temperature measurement; Temperature sensors; MEMS; infrared microbolometer; micro-cavity; temperature sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Bioelectronics and Bioinformatics (ISBB), 2014 IEEE International Symposium on

Conference_Location

Chung Li

Print_ISBN

978-1-4799-2769-2

Type

conf

DOI

10.1109/ISBB.2014.6820898

Filename

6820898