Title :
Comparisons and extension of recent surface potential models for fully depleted short-channel SOI MOSFET´s
Author :
Niu, G.F. ; Chen, R.M.M. ; Ruan, G.
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Hong Kong
fDate :
11/1/1996 12:00:00 AM
Abstract :
Recent surface potential models for fully depleted short-channel SOI MOSFET´s are compared. The parabolic potential approach is clarified to be a special case of the quasi-2-D approach. An extended quasi-2-D model is also derived
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; surface potential; Si; extended quasi-2D model; fully depleted SOI MOSFET; parabolic potential approach; short-channel SOI MOSFET; surface potential models; Contact resistance; Data mining; Electrical resistance measurement; Electrons; Impurities; Monte Carlo methods; Scattering; Semiconductor devices; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
