• DocumentCode
    1439051
  • Title

    Comparisons and extension of recent surface potential models for fully depleted short-channel SOI MOSFET´s

  • Author

    Niu, G.F. ; Chen, R.M.M. ; Ruan, G.

  • Author_Institution
    Dept. of Electron. Eng., City Univ. of Hong Kong, Hong Kong
  • Volume
    43
  • Issue
    11
  • fYear
    1996
  • fDate
    11/1/1996 12:00:00 AM
  • Firstpage
    2034
  • Lastpage
    2037
  • Abstract
    Recent surface potential models for fully depleted short-channel SOI MOSFET´s are compared. The parabolic potential approach is clarified to be a special case of the quasi-2-D approach. An extended quasi-2-D model is also derived
  • Keywords
    MOSFET; semiconductor device models; silicon-on-insulator; surface potential; Si; extended quasi-2D model; fully depleted SOI MOSFET; parabolic potential approach; short-channel SOI MOSFET; surface potential models; Contact resistance; Data mining; Electrical resistance measurement; Electrons; Impurities; Monte Carlo methods; Scattering; Semiconductor devices; Transconductance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.543048
  • Filename
    543048
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1439051