DocumentCode :
1439076
Title :
1/f noise in advanced CMOS transistors
Author :
Nemirovsky, Yael ; Corcos, Dan ; Brouk, Igor ; Nemirovsky, Amikam ; Chaudhry, Samir
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Institute of Technology, Haifa, Israel
Volume :
14
Issue :
1
fYear :
2011
Firstpage :
14
Lastpage :
22
Abstract :
This paper is a review of 1/f noise in state-of-the-art advanced MOSFETs, where the channel length has deep submicron or nano-scale dimensions. The origin of 1/f noise, models of 1/f noise, and ways of measuring 1/f noise are briefly reviewed.
Keywords :
1/f noise; MOSFET; noise measurement; semiconductor device measurement; semiconductor device models; semiconductor device noise; 1/f noise model; CMOS transistor; MOSFET; channel length; noise measurement; 1f noise; CMOS technology; Noise measurement; Transistors;
fLanguage :
English
Journal_Title :
Instrumentation & Measurement Magazine, IEEE
Publisher :
ieee
ISSN :
1094-6969
Type :
jour
DOI :
10.1109/MIM.2011.5704805
Filename :
5704805
Link To Document :
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