Title :
Punchthrough diode as the transient voltage suppressor for low-voltage electronics
Author :
King, Ya-Chin ; Yu, Bin ; Pohlman, Jeff ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
11/1/1996 12:00:00 AM
Abstract :
Protection devices for future low-voltage electronics are needed. Performances of a new punchthrough transient voltage suppressor (TVS) are analyzed with two-dimensional device simulation. Compared with the available low-voltage TVS constructed with a Zener diode, the punchthrough diode shows far superior leakage current and capacitance. These punchthrough TVS devices are satisfactory for applications not only at 3 V but even at 1 V
Keywords :
capacitance; leakage currents; overvoltage protection; protection; semiconductor device models; semiconductor diodes; surge protection; transient analysis; 1 to 3 V; capacitance; leakage current; low-voltage electronics; protection device; punchthrough diode; transient voltage suppressor; two-dimensional device simulation; Avalanche breakdown; Breakdown voltage; Capacitance; Circuit simulation; Clamps; Diodes; Doping; Electric breakdown; Leakage current; Protection;
Journal_Title :
Electron Devices, IEEE Transactions on
