Micromachined filters on synthesized substrates

Author

Drayton, Rhonda Franklin ; Pacheco, Sergio Palma ; Katehi, Linda P B ; Wang, Jianei ; Yook, Jong-Gwan

Author_Institution

Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA

Volume

49

Issue

2

fYear

2001

fDate

2/1/2001 12:00:00 AM

Firstpage

308

Lastpage

314

Abstract

Effective high-frequency spectrum usage requires high-performance filters to have a sharp cutoff frequency and high stopband attenuation. Stepped-impedance low-pass designs achieve this function best with large ratios of high-to-low-impedance values. In high-index materials, such as Si (11.7) and GaAs (12.9), however these high-to-low-impedance ratios are around five, thereby significantly limiting optimum filter performance. This paper characterizes the use of Si micromachining for the development of synthesized substrates, which, when utilized appropriately, can further reduce the low-impedance value or increase the high-impedance value. Both designs have demonstrated high-to-low-impedance ratios that are 1.5-2 times larger than conventional techniques

Keywords

Butterworth filters; Chebyshev filters; elemental semiconductors; low-pass filters; micromachining; microstrip filters; microstrip lines; silicon; Si; cutoff frequency; high-to-low-impedance value ratios; micromachined filters; optimum filter performance; stepped-impedance low-pass design; stopband attenuation; synthesized substrates; Attenuation; Circuit synthesis; Frequency; Gallium arsenide; Impedance; Low pass filters; Micromachining; Semiconductor materials; Silicon; Substrates;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.903090

Filename

903090