Accurate RF large-signal model of LDMOSFETs including self-heating effect

Author

Yang, Youngoo ; Yi, Jaehyok ; Kim, Bumman

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea

Volume

49

Issue

2

fYear

2001

fDate

2/1/2001 12:00:00 AM

Firstpage

387

Lastpage

390

Abstract

In this paper, we present a new silicon RF LDMOSFET large-signal model including a self-heating effect. A new empirical channel current model suited for accurately predicting intermodulation distortion is employed. The proposed channel current model can represent transconductance (gm) saturation and rolloff in the continuous manner. It has continuous higher order derivatives for accurate prediction of nonlinear microwave circuit behavior, such as power amplifiers, microwave mixers, oscillators, etc. Using the complete large-signal model, we have designed and implemented a 1.2 GHz power amplifier. The measured and simulated amplifier characteristics, especially the intermodulation and harmonic behaviors, are in good agreement

Keywords

UHF field effect transistors; elemental semiconductors; equivalent circuits; intermodulation distortion; power MOSFET; semiconductor device models; silicon; 1.2 GHz; IMD prediction; LDMOSFETs; RF large-signal model; Si; amplifier characteristics; continuous higher order derivatives; empirical channel current model; intermodulation distortion; nonlinear microwave circuit behavior prediction; rolloff; self-heating effect; transconductance saturation; High power amplifiers; Intermodulation distortion; Microwave amplifiers; Microwave circuits; Microwave oscillators; Power amplifiers; Predictive models; Radio frequency; Silicon; Transconductance;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.903103

Filename

903103