Title :
A novel interpretation of transistor S-parameters by poles and zeros for RF IC circuit design
Author :
Lu, Shey-Shi ; Chen, Tsu-Wei ; Chen, To-Wei ; Meng, Chin-Chun
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
2/1/2001 12:00:00 AM
Abstract :
In this paper, we have developed an interpretation of transistor S-parameters by poles and zeros. The results from our proposed method agreed well with experimental data from GaAs FETs and Si MOSFETs. The concept of source-series feedback was employed to analyze a transistor circuit set up for the measurement of the S-parameters. Our method can describe the frequency responses of all transistor S-parameters very easily and the calculated S-parameters are scalable with device sizes. It was also found that the long-puzzled kink phenomenon of S22 observed in a Smith chart can be explained by the poles and zeros of S22
Keywords :
MMIC; S-parameters; UHF integrated circuits; UHF transistors; equivalent circuits; feedback; frequency response; integrated circuit design; microwave transistors; poles and zeros; semiconductor device models; 0.5 to 20 GHz; GaAs; GaAs FETs; RFIC design; S22; Si; Si MOSFET; Smith chart; frequency responses; kink phenomenon; poles and zeros; source-series feedback; transistor S-parameters; Circuit analysis; Circuit synthesis; FETs; Feedback circuits; Gallium arsenide; MOSFETs; Microwave circuits; Poles and zeros; Radio frequency; Radiofrequency integrated circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
