Title :
Theoretical Analysis of the Optical Feedback Noise Based on Multimode Model of Semiconductor Lasers
Author :
Imran, Sazzad M S ; Yamada, Minoru ; Kuwamura, Yuji
Author_Institution :
Grad. Sch. of Natural Sci. & Technol., Kanazawa Univ., Kanazawa, Japan
fDate :
4/1/2012 12:00:00 AM
Abstract :
An improved theoretical model to analyze the dynamics and operation of semiconductor lasers under optical feedback has been presented in this paper. A set of rate equations are formulated, in which the self and mutual gain saturation effects among lasing modes, reinjection of delayed feedback light reflected at the surface of the connecting optical device, and Langevin noise sources for the intensity and phase fluctuations are taken into account. The proposed model is applied to 850-nm GaAs lasers operating under optical feedback. The rate equations are calculated by tracing time variation, and frequency spectra of intensity noise are determined with the help of the fast Fourier transform. In this paper, numerical simulations based on our theoretical model confirmed that the feedback noise is classified into two types based on profiles of the frequency spectrum, where one is the low-frequency type and another is the flat type. These properties are in good agreement with those previously obtained in the experimental measurements. This evidence of agreement between experimental results and numerical simulations supports the accuracy of our model.
Keywords :
III-V semiconductors; fast Fourier transforms; gallium arsenide; light reflection; numerical analysis; optical noise; semiconductor lasers; GaAs; Langevin noise sources; delayed feedback light reflection; fast Fourier transform; intensity noise frequency spectra; multimode model; numerical simulations; optical device; optical feedback noise; semiconductor lasers; wavelength 850 nm; Laser feedback; Laser modes; Mathematical model; Optical feedback; Semiconductor lasers; Feedback noise; Langevin noise source; gain suppression; intensity noise; mode competition; multimode; semiconductor laser;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2012.2186790