DocumentCode :
1439603
Title :
A Sensing Noise Compensation Bit Line Sense Amplifier for Low Voltage Applications
Author :
Lee, Myoung Jin
Author_Institution :
R& D Div., Hynix Semicond. Inc., Icheon, South Korea
Volume :
46
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
690
Lastpage :
694
Abstract :
A new bit-line sense amplifier for improving performance in the presence of data-pattern-dependent sensing noise is analyzed. The proposed scheme utilizes the power drop phenomenon in the sense amplifier driving line, resulting in an 81.5% reduction in the amplitude of data-pattern-dependent sensing noise. It is very important to accurately model power drop in compensating data-pattern-dependent sensing noise. Simulation and measurement of the proposed sensing scheme show improvement of sensing noise over a conventional bit-line sense amplifier. Moreover, the type of sense amplifier driver circuit significantly affects the magnitude of the improvement. The impact of the sense amplifier driver layout is analyzed in order to better utilize the proposed scheme. Finally, an optimum data pattern noise insensitive sense amplifier and driver are proposed.
Keywords :
DRAM chips; amplifiers; low-power electronics; data-pattern-dependent sensing noise; low voltage applications; sensing noise compensation bit line sense amplifier; Arrays; Driver circuits; Noise; Random access memory; Resistance; Sensors; Solids; bit-line sense amplifier (BLSA); cell array; coupling effect; data pattern; dynamic random access memory (DRAM); offset; sensing noise;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2010.2102570
Filename :
5705519
Link To Document :
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