Numerical analysis of thermally induced optical nonlinearity in GaSe layered crystal

Author

Navarro, E.A. ; Hernàndez, M.A. ; Andrés, M.V. ; Segura, A. ; Muñoz, V.

Author_Institution

Dept. de Fisica Aplicada, Valencia Univ., Spain

Volume

143

Issue

4

fYear

1996

fDate

8/1/1996 12:00:00 AM

Firstpage

244

Lastpage

247

Abstract

A numerical approach to studying thermally induced optical nonlinearity semiconductors is presented. A transient difference algorithm is applied to thermal diffusion equation coupled nonlinear absorbance-transmittance of Au/GaSe/Au samples with an applied electric field. The presented analysis can deal with any arbitrary axisymmetric dependence of the input power over the sample and external electric field, and provides information about the steady state and transitory effects in the transmittance

Keywords

III-V semiconductors; crystals; finite difference methods; gallium compounds; light absorption; nonlinear optics; optical films; thermo-optical effects; transient analysis; Au-GaSe-Au; Au/GaSe/Au samples; GaSe layered crystal; applied electric field; arbitrary axisymmetric dependence; coupled nonlinear absorbance-transmittance; external electric field; input power; numerical analysis; numerical approach; steady state; thermal diffusion equation; thermally induced optical nonlinearity; thermally induced optical nonlinearity semiconductors; transient difference algorithm; transitory effects; transmittance;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19960523

Filename

543058