Title :
Numerical analysis of thermally induced optical nonlinearity in GaSe layered crystal
Author :
Navarro, E.A. ; Hernàndez, M.A. ; Andrés, M.V. ; Segura, A. ; Muñoz, V.
Author_Institution :
Dept. de Fisica Aplicada, Valencia Univ., Spain
fDate :
8/1/1996 12:00:00 AM
Abstract :
A numerical approach to studying thermally induced optical nonlinearity semiconductors is presented. A transient difference algorithm is applied to thermal diffusion equation coupled nonlinear absorbance-transmittance of Au/GaSe/Au samples with an applied electric field. The presented analysis can deal with any arbitrary axisymmetric dependence of the input power over the sample and external electric field, and provides information about the steady state and transitory effects in the transmittance
Keywords :
III-V semiconductors; crystals; finite difference methods; gallium compounds; light absorption; nonlinear optics; optical films; thermo-optical effects; transient analysis; Au-GaSe-Au; Au/GaSe/Au samples; GaSe layered crystal; applied electric field; arbitrary axisymmetric dependence; coupled nonlinear absorbance-transmittance; external electric field; input power; numerical analysis; numerical approach; steady state; thermal diffusion equation; thermally induced optical nonlinearity; thermally induced optical nonlinearity semiconductors; transient difference algorithm; transitory effects; transmittance;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19960523
