Title :
An Integrated Power-Efficient Active Rectifier With Offset-Controlled High Speed Comparators for Inductively Powered Applications
Author :
Lee, Hyung-Min ; Ghovanloo, Maysam
Author_Institution :
GT-Bionics Lab., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We present an active full-wave rectifier with offset-controlled high speed comparators in standard CMOS that provides high power conversion efficiency (PCE) in high frequency (HF) range for inductively powered devices. This rectifier provides much lower dropout voltage and far better PCE compared to the passive on-chip or off-chip rectifiers. The built-in offset-control functions in the comparators compensate for both turn-on and turn-off delays in the main rectifying switches, thus maximizing the forward current delivered to the load and minimizing the back current to improve the PCE. We have fabricated this active rectifier in a 0.5-μm 3M2P standard CMOS process, occupying 0.18 mm2 of chip area. With 3.8 V peak ac input at 13.56 MHz, the rectifier provides 3.12 V dc output to a 500 Ω load, resulting in the PCE of 80.2%, which is the highest measured at this frequency. In addition, overvoltage protection (OVP) as safety measure and built-in back telemetry capabilities have been incorporated in our design using detuning and load shift keying (LSK) techniques, respectively, and tested.
Keywords :
CMOS integrated circuits; comparators (circuits); delays; overvoltage protection; power conversion; rectifying circuits; switches; telemetry; LSK technique; OVP; PCE; back current maximization; built-in back telemetry; dropout voltage; efficiency 80.2 percent; forward current maximization; frequency 13.56 MHz; full-wave rectifier; inductively powered application; integrated power-efficient active rectifier; load shift keying technique; offset-controlled high speed comparator; overvoltage protection; passive off-chip rectifier; passive on-chip rectifier; power conversion efficiency; rectifying switch; resistance 500 ohm; size 0.5 mum; standard CMOS process; turn-off delay; turn-on delay; voltage 3.12 V; voltage 3.8 V; Coils; Delay; Logic gates; Power demand; Schottky diodes; Telemetry; Transistors; Active rectifier; RFID; back telemetry; high speed comparators; implantable microelectronic devices; inductive power transmission; load shift keying; offset control;
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
DOI :
10.1109/TCSI.2010.2103172