DocumentCode :
1439675
Title :
Design of a Tri-Modal Multi-Threshold CMOS Switch With Application to Data Retentive Power Gating
Author :
Pakbaznia, Ehsan ; Pedram, Massoud
Author_Institution :
Univ. of Southern California, Los Angeles, CA, USA
Volume :
20
Issue :
2
fYear :
2012
Firstpage :
380
Lastpage :
385
Abstract :
A tri-modal multi-threshold CMOS (MTCMOS) switch design is presented. Similar to the conventional MTCMOS switches, the tri-modal switch comes in two flavors: header and footer. The tri-modal switch provides three different power modes for the underlying circuit: active, drowsy, and sleep. The ability of data retention in the drowsy mode makes the proposed tri-modal switch an excellent candidate for implementing data-retentive power gating designs. We will see that three different low-power design schemes, namely data-retentive power gating, multi-drowsy mode structures, and on-chip dynamic voltage scaling, are implemented using the proposed tri-modal switch. We show that our proposal introduces superior low-power solutions across various circuit operating modes using a single circuitry.
Keywords :
CMOS integrated circuits; power aware computing; power integrated circuits; data retention; data retentive power gating; data-retentive power gating design; multidrowsy mode structure; on-chip dynamic voltage scaling; trimodal multithreshold CMOS switch design; trimodal switch; Leakage current; Pipelines; Switches; Switching circuits; Threshold voltage; Transistors; Voltage control; Data retentive; MTCMOS; VLSI; drowsy; low power; multimodal; power gating;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2010.2102054
Filename :
5705529
Link To Document :
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