• DocumentCode
    1439735
  • Title

    Phase-Change Technology and the Future of Main Memory

  • Author

    Lee, Benjamin C. ; Zhou, Ping ; Yang, Jun ; Zhang, Youtao ; Zhao, Bo ; Ipek, Engin ; Mutlu, Onur ; Burger, Doug

  • Author_Institution
    Electr. Eng., Stanford Univ., Stanford, CA, USA
  • Volume
    30
  • Issue
    1
  • fYear
    2010
  • Firstpage
    143
  • Lastpage
    143
  • Abstract
    Phase-change may enable continued scaling of main memories, but PCM has higher access latencies, incurs higher power costs, and wears out more quickly than DRAM. This article discusses how to mitigate these limitations through buffer sizing, row caching, write reduction, and wear leveling, to make PCM a viable dream alternative for scalable main memories.
  • Keywords
    DRAM chips; cache storage; phase change memories; DRAM; PCM; buffer sizing; main memory; phase change technology; power cost; row caching; wear leveling; write reduction; Costs; Delay; Flash memory; Material storage; Nonvolatile memory; Phase change materials; Phase change memory; Prototypes; Random access memory; Space technology; DRAM; PCM; energy efficiency; memory architecture; phase-change memory; technology scaling;
  • fLanguage
    English
  • Journal_Title
    Micro, IEEE
  • Publisher
    ieee
  • ISSN
    0272-1732
  • Type

    jour

  • DOI
    10.1109/MM.2010.24
  • Filename
    5430747
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1439735