Title :
Electrostatics of Ultimately Thin-Body Tunneling FET Using Graphene Nanoribbon
Author :
Lam, Kai-Tak ; Yang, Yue ; Samudra, G.S. ; Yeo, Yee-Chia ; Liang, Gengchiau
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fDate :
4/1/2011 12:00:00 AM
Abstract :
The effect of 2-D electrostatic environment on the device performance of ultimately thin-body tunneling field-effect transistors (UTB-TFETs) using graphene nanoribbons (GNRs) is investigated by varying the gate-oxide thickness and insulating material with different dielectric constants (k ). Compared to Si TFETs with different body thicknesses, the atomic-layer-thick structure enhances the lateral fringing fields at the source-channel interface, resulting in a lower on-state current in GNR TFETs with high-k oxide as compared to the low-k variant of the same thickness. Low- k spacers are therefore essential to counter this effect and reap the benefits of high-k dielectrics in improving the device performance of UTB-TFETs.
Keywords :
electrostatics; field effect transistors; graphene; high-k dielectric thin films; insulating materials; low-k dielectric thin films; nanoelectronics; permittivity; tunnelling; 2D electrostatic environment effect; GNR TFET; Si TFET; UTB-TFET; atomic-layer-thick structure; dielectric constants; gate-oxide thickness; graphene nanoribbon; high-k dielectrics; high-k oxide; insulating material; lateral fringing fields; low-k spacers; source-channel interface; ultimately thin-body tunneling FET; High K dielectric materials; Logic gates; Performance evaluation; Silicon; Transistors; Tunneling; Electrostatics; graphene; tunneling transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2103372
