DocumentCode :
1439843
Title :
An approach for selecting switching devices for CFL ballasts
Author :
Laskai, Laszlo ; Ilic, Milan
Author_Institution :
Corp. Res. & Dev., Gen. Electr. Co., Schenectady, NY, USA
Volume :
37
Issue :
1
fYear :
2001
Firstpage :
268
Lastpage :
275
Abstract :
This paper discusses a method for switching device selection for lowest overall compact fluorescent lamp (CFL) ballast cost while satisfying product life requirements. The inputs to the selection process are lamp power, expected product life, and a range of semiconductor devices that satisfy electrical requirements of conventional half-bridge series-resonant ballast topology. The selection process is illustrated with the example of an n-channel MOSFET pair, complementary pair of an n- and p-channel MOSFETs, bipolar junction transistor pair, and a pair of insulated gate bipolar transistors. While this paper addresses switching device selection for CFL applications, the outlined approach is more universal and can be applied to electronic equipment in general
Keywords :
DC-AC power convertors; bipolar transistor switches; bridge circuits; field effect transistor switches; fluorescent lamps; insulated gate bipolar transistors; invertors; lamp accessories; power MOSFET; power bipolar transistors; power semiconductor switches; resonant power convertors; switching circuits; CFL ballasts; bipolar junction transistors; compact fluorescent lamps; cost minimisation; expected product life; half-bridge series-resonant ballast topology; insulated gate bipolar transistors; lamp power; power MOSFETs; product life requirements; semiconductor devices; switching devices selection; Circuits; Costs; Electronic ballasts; Electronic equipment; Fluorescent lamps; Frequency; Insulated gate bipolar transistors; Power system reliability; Semiconductor devices; Temperature;
fLanguage :
English
Journal_Title :
Industry Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/28.903163
Filename :
903163
Link To Document :
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