Title :
Design of a Wideband High-Voltage High-Efficiency BiCMOS Envelope Amplifier for Micro-Base-Station RF Power Amplifiers
Author :
Kwak, Myoungbo ; Kimball, Donald F. ; Presti, Calogero D. ; Scuderi, Antonino ; Santagati, Carmelo ; Yan, Jonmei J. ; Asbeck, Peter M. ; Larson, Lawrence E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, San Diego, CA, USA
fDate :
6/1/2012 12:00:00 AM
Abstract :
A high-performance bipolar-CMOS-DMOS (BCD) monolithic envelope amplifier for micro-base-station power amplifiers (PAs) is presented. Measurement of the BCD high-voltage (VDD = 15 V) envelope amplifier shows an efficiency of 72% using 7.7-dB peak-to-average ratio WCDMA input signals at an average envelope amplifier output power above 3 W. A WCDMA envelope-tracking RF PA at 2.14 GHz, including a GaN field-effect transistor RF stage, has an overall drain efficiency above 51%, with a normalized power root-mean-square error below 1.2% and an adjacent channel leakage ratio of -49 dBc at 5-MHz offset using memory-effect mitigation digital pre-distortion, at an average output power above 2 W and a gain of 10 dB.
Keywords :
BiCMOS integrated circuits; III-V semiconductors; UHF power amplifiers; code division multiple access; field effect transistors; gallium compounds; mean square error methods; wide band gap semiconductors; wideband amplifiers; BCD monolithic envelope amplifier; BiCMOS envelope amplifier; GaN; GaN field-effect transistor; WCDMA envelope-tracking; WCDMA input signals; bipolar-CMOS-DMOS; digital pre-distortion; frequency 2.14 GHz; gain 10 dB; high-voltage measurement; memory-effect mitigation; microbase station RF power amplifiers; root mean square error; wideband amplifier; HEMTs; Power generation; Radio frequency; Switches; Switching frequency; Base-station power amplifier (PA); WCDMA; bipolar-CMOS-DMOS (BCD); digital pre-distortion (DPD); efficiency; envelope tracking (ET); linearity; memory mitigation; micro-base-station;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2012.2184128
