DocumentCode
1440024
Title
Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs
Author
Griffoni, Alessio ; Van Duivenbode, Jeroen ; Linten, Dimitri ; Simoen, Eddy ; Rech, Paolo ; Dilillo, Luigi ; Wrobel, Frédéric ; Verbist, Patrick ; Groeseneken, Guido
Author_Institution
OSRAM, Treviso, Italy
Volume
59
Issue
4
fYear
2012
Firstpage
866
Lastpage
871
Abstract
50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.
Keywords
Insulated gate bipolar transistors; Ions; Logic gates; MOSFETs; Neutrons; Silicon; Silicon carbide; Insulated gate bipolar transistor (IGBT); neutrons; power MOSFET; silicon carbide (SiC); single event burnout (SEB); single event gate rupture (SEGR); super-junction;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2011.2180924
Filename
6145667
Link To Document