DocumentCode :
1440082
Title :
Analysis of Class-DE Amplifier With Linear and Nonlinear Shunt Capacitances at 25% Duty Ratio
Author :
Sekiya, Hiroo ; Sagawa, Natsumi ; Kazimierczuk, Marian K.
Author_Institution :
Grad. Sch. of Adv. Integration Sci., Chiba Univ., Chiba, Japan
Volume :
57
Issue :
9
fYear :
2010
Firstpage :
2334
Lastpage :
2342
Abstract :
The class-E zero-voltage switching/zero-derivative switching operation within class-DE amplifiers can be easily achieved by adding external shunt capacitances. This paper gives the analytical expressions for the designs of the class-DE amplifiers with the shunt capacitances composed of linear and nonlinear capacitances for any grading coefficient m of MOSFET body junction diodes at the switch-on duty ratio D=0.25 . In the analysis, an equivalent linear shunt capacitance of the nonlinear MOSFET drain-source parasitic capacitances is derived. Analytical results show good agreements with the simulation and experimental ones, which validate our analysis.
Keywords :
power MOSFET; power amplifiers; MOSFET; body junction diodes; class-DE amplifier; duty ratio; nonlinear shunt capacitances; Analytical models; Diodes; Frequency; High power amplifiers; MOSFET circuits; Operational amplifiers; Parasitic capacitance; Power amplifiers; Power generation; Zero voltage switching; Class-DE power amplifier; class-E zero-voltage switching (ZVS)/zero-derivative switching (ZDS) conditions; equivalent linear shunt capacitance; high efficiency; nonlinear MOSFET drain–source parasitic capacitance;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2010.2043013
Filename :
5430894
Link To Document :
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