DocumentCode :
1440285
Title :
Type-I GaSb-Based Laser Diodes Operating in 3.1- to 3.3- 
m Wavelength Range
Author :
Hosoda, Takashi ; Kipshidze, Gela ; Tsvid, Gene ; Shterengas, Leon ; Belenky, Gregory
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York at Stony Brook, Stony Brook, NY, USA
Volume :
22
Issue :
10
fYear :
2010
fDate :
5/15/2010 12:00:00 AM
Firstpage :
718
Lastpage :
720
Abstract :
Type-I quantum-well (QW) diode lasers based on AlInGaAsSb-InGaAsSb-AlInGaAsSb heterostructure active region with narrow waveguide and high indium content in the barrier were fabricated. Room-temperature continuous-wave output power of 190, 165, and 50 mW for devices emitting 3.1, 3.2, and 3.3 μm correspondingly were demonstrated. Experiment shows that improvement of the hole confinement in QWs by use of 32% indium in AlGaInAsSb barrier is a promising way of further enhancement of the device performance.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; hole traps; indium compounds; optical waveguides; quantum well lasers; AlInGaAsSb-InGaAsSb-AlInGaAsSb; continuous wave operation; hole confinement; laser diodes; narrow waveguide; power 165 mW; power 190 mW; power 50 mW; quantum well diode lasers; temperature 293 K to 298 K; wavelength 3.1 nm to 3.3 nm; Diode laser; GaSb; midinfrared; type-I;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2044659
Filename :
5430922
Link To Document :
