Title :
Enhanced Electroluminescence Efficiency of Phosphorescent Organic Light-Emitting Diodes by Controlling the Triplet Energy of the Hole-Blocking Layer
Author :
Park, Young Wook ; Kim, Young Min ; Choi, Jin Hwan ; Park, Tae Hyun ; Jeong, Jin-Wook ; Choi, Hyun Ju ; Ju, Byeong Kwon
Author_Institution :
Display & Nanosystem Lab., Korea Univ., Seoul, South Korea
fDate :
5/1/2010 12:00:00 AM
Abstract :
This letter reports on the effect of the triplet energy (E T) of the hole-blocking layer (HBL) on triplet exciton quenching between the emissive layer (EML) host and the HBL of phosphorescent organic light-emitting diodes (PHOLEDs). Using different EML hosts and HBLs having different E T\´s and electron mobilities, the effects of the E T\´s of the HBL have been analyzed. When the E T of the HBL is lower than that of the EML host, the PHOLEDs show significant dependence of reduced device performances. PHOLEDs having a 3-(4-biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole HBL show 65% improved external quantum efficiency (EQE) at 500 cd/m2 with a 4, 4\´,4"-tris( N-carbazolyl)-triphenyl-amine host than that with an N,N\´ -dicarbazolyl-4-4\´\´biphenyl host, while PHOLEDs having a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline HBL show 41% reduced EQE. To solve the remaining key issue of developing highly efficient PHOLEDs, the E T of matching the EML and the HBL is extremely desirable and is also explored.
Keywords :
electroluminescence; organic light emitting diodes; phosphorescence; triplet state; 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline; 3-(4-biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole; 4, 4\´,4"-tris( N-carbazolyl)-triphenyl-amine; N,N\´ -dicarbazolyl-4-4\´\´biphenyl host; PHOLED; electroluminescence; emissive layer; external quantum efficiency; hole-blocking layer; phosphorescent organic light-emitting diode; triplet energy; triplet exciton quenching; Phosphorescent organic light-emitting diodes (PHOLEDs); triplet energy of hole-blocking layer (HBL); triplet quenching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2041891