Effects of self-heating on planar heterostructure barrier varactor diodes

Author

Stake, Jan ; Dillner, Lars ; Jones, Stephen H. ; Mann, Chris ; Thornton, John ; Jones, J. Robert ; Bishop, William L. ; Kollberg, Erik

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

45

Issue

11

fYear

1998

fDate

11/1/1998 12:00:00 AM

Firstpage

2298

Lastpage

2303

Abstract

The conversion efficiency for planar Al_0.7GaAs-GaAs heterostructure barrier varactor triplers is shown to be reduced from a theoretical efficiency of 10% to 3% due to self-heating. The reduction is in accordance with measurements on planar Al_0.7GaAs-GaAs heterostructure barrier varactor (HBV) triplers to 261 GHz at room temperature and with low temperature tripler measurements to 255 GHz. The delivered maximum output power at 261 GHz is 2.0 mW. Future HBV designs should carefully consider and reduce the device thermal resistance and parasitic series resistance. Optimization of the RF circuit for a 10 μm diameter device yielded a delivered output power of 3.6 mW (2.5% conversion efficiency) at 234 GHz

Keywords

III-V semiconductors; aluminium compounds; electric resistance; frequency multipliers; gallium arsenide; millimetre wave diodes; millimetre wave frequency convertors; semiconductor device models; thermal resistance; varactors; 10 micron; 2 to 3.6 mW; 2.5 to 10 percent; 234 to 261 GHz; Al_0.7GaAs-GaAs; EHF; MM-wave varactor triplers; conversion efficiency; device thermal resistance; parasitic series resistance; planar heterostructure barrier varactor diodes; self-heating effects; Anodes; Frequency; Gallium arsenide; Laboratories; Ohmic contacts; Power generation; Schottky diodes; Temperature; Thermal resistance; Varactors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.726644

Filename

726644