• DocumentCode
    1440462
  • Title

    Geometry effects on the electronic properties of multi-open dots structures

  • Author

    Fagotto, E.A.M. ; Rossi, M. ; Moschim, E.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., State Univ. of Campinas, Brazil
  • Volume
    45
  • Issue
    11
  • fYear
    1998
  • fDate
    11/1/1998 12:00:00 AM
  • Firstpage
    2361
  • Lastpage
    2364
  • Abstract
    In this paper we show that the electronic properties of multi-open dots structures are strongly modified by even small changes in their geometries. Our discussion of these effects is done in terms of the interaction among localized states (dot-like) and extended states (channel-like), from which a Fano resonance situation arises
  • Keywords
    localised states; semiconductor quantum dots; Fano resonance; electronic properties; extended states; geometry effects; localized states; multi-open dots structures; Brazil Council; Eigenvalues and eigenfunctions; Fluctuations; Geometry; Impurities; Particle scattering; Quantum dots; Reservoirs; Resonance; US Department of Transportation;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.726657
  • Filename
    726657
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1440462