Title :
High-power near-diffraction-limited tapered amplifiers at 1064 nm for optical intersatellite communications
Author :
Chazan, P. ; Mayor, J.M. ; Morgott, S. ; Mikulla, M. ; Kiefer, R. ; Muller, S. ; Walther, M. ; Braunstein, J. ; Weimann, G.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
The realization of high-power tapered amplifiers at 1064 nm on a low-modal gain structure is presented. More than 1.5-W continuous-wave optical output power at 3-A injection current is achieved with only 13-mW input optical power and a near-diffraction-limited output beam quality. The use of a low-modal gain structure in conjunction with a very low AR-coating value avoids the addition of cavity spoilers. The implementation of such amplifiers in an optical intersatellite communication system is studied. The devices showed excellent resistance to 160-krad proton irradiation. Preliminary aging tests on broad-area laser diodes demonstrate extrapolated lifetimes as long as 20000 h at 50/spl deg/C.
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical films; optical links; optical transmitters; quantum well lasers; satellite links; 1.5 W; 1064 nm; 13 mW; 20000 h; 50 C; InGaAs QW lasers; broad-area laser diodes; cavity spoilers; continuous-wave optical output power; extrapolated lifetimes; high-power near-diffraction-limited tapered amplifiers; high-power tapered amplifiers; injection current; low-modal gain structure; mW input optical power; near-diffraction limited output beam quality; optical intersatellite communication system; optical intersatellite communications; output beam quality; proton irradiation; very low AR-coating value; Aging; High power amplifiers; Laser beams; Life testing; Optical amplifiers; Power amplifiers; Power generation; Protons; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE