Title :
A novel analytical expression of saturation intensity of InGaAsP tapered traveling-wave semiconductor laser amplifier structures
Author :
Ghafouri-Shiraz, H. ; Tan, P.W. ; Wong, W.M.
Author_Institution :
Sch. of Electron. & Electr. Eng., Birmingham Univ., UK
Abstract :
We have proposed a novel approximate analytical expression for saturation intensity for tapered traveling-wave semiconductor laser amplifier structures. The application of this analytical expression of saturation intensity has been demonstrated by considering the effect of gain saturation on polarization sensitivity of two tapered amplifier structures, linear and exponential tapered amplifier structures. It is found that polarization sensitivity of the tapered amplifier structure is several decibels higher than that of passive tapered waveguides in unsaturated condition. Polarization sensitivity of the two tapered amplifier structures has also been investigated in a highly saturated condition. The combined effects of mode conversion and gain saturation on fundamental TE gain have also been investigated using the proposed analytical expression for saturation intensity.
Keywords :
III-V semiconductors; approximation theory; gallium arsenide; gallium compounds; indium compounds; laser modes; laser theory; light polarisation; optical saturation; semiconductor device models; semiconductor lasers; waveguide lasers; InGaAsP tapered traveling-wave semiconductor laser amplifier structures; analytical expression; approximate analytical expression; exponential tapered amplifier structures; fundamental TE gain; gain saturation; highly saturated condition; passive tapered waveguides; polarization sensitivity; saturation intensity; tapered amplifier structures; unsaturated condition; Laser modes; Optical amplifiers; Optical polarization; Optical saturation; Optical sensors; Optical waveguides; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission; Tellurium;
Journal_Title :
Photonics Technology Letters, IEEE
