Internal Bias Field in Ferroelectric Polymer Thin Film for Nonvolatile Memory Applications

Author

Kim, Woo Young ; Ka, Du Youn ; Kim, Dong Soo ; Kwon, Il Woong ; Kim, Sang Youl ; Lee, Yong Soo ; Lee, Hee Chul

Author_Institution

Div. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

31

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

482

Lastpage

484

Abstract

Coercive voltages (V _C, the voltage which makes remanent polarization zero in ferroelectrics) of metal-ferroelectric polymer-metal capacitors were measured with different pulse periods. From the measured V _C, coercive fields (E _C, normalized V _C for thickness) and internal bias fields (E _BIAS) were calculated. Although E _C was found to be nearly constant with thickness, E _BIAS increased as thickness decreased. Based on these findings, it appears that E _BIAS can be induced from interface phenomenon and greatly affects retention performance in thin ferroelectric films used for nonvolatile memory devices.

Keywords

coercive force; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; polymer films; random-access storage; coercive fields; coercive voltages; ferroelectric polymer thin film; interface phenomenon; internal bias fields; metal-ferroelectric polymer-metal capacitors; nonvolatile memory applications; nonvolatile memory devices; remanent polarization zero; thin ferroelectric films; Ferroelectric; interface asymmetry; internal bias field; nonvolatile memory; pulse period; retention;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2042676

Filename

5431003