Title :
Internal Bias Field in Ferroelectric Polymer Thin Film for Nonvolatile Memory Applications
Author :
Kim, Woo Young ; Ka, Du Youn ; Kim, Dong Soo ; Kwon, Il Woong ; Kim, Sang Youl ; Lee, Yong Soo ; Lee, Hee Chul
Author_Institution :
Div. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fDate :
5/1/2010 12:00:00 AM
Abstract :
Coercive voltages (V C, the voltage which makes remanent polarization zero in ferroelectrics) of metal-ferroelectric polymer-metal capacitors were measured with different pulse periods. From the measured V C, coercive fields (E C, normalized V C for thickness) and internal bias fields (E BIAS) were calculated. Although E C was found to be nearly constant with thickness, E BIAS increased as thickness decreased. Based on these findings, it appears that E BIAS can be induced from interface phenomenon and greatly affects retention performance in thin ferroelectric films used for nonvolatile memory devices.
Keywords :
coercive force; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; polymer films; random-access storage; coercive fields; coercive voltages; ferroelectric polymer thin film; interface phenomenon; internal bias fields; metal-ferroelectric polymer-metal capacitors; nonvolatile memory applications; nonvolatile memory devices; remanent polarization zero; thin ferroelectric films; Ferroelectric; interface asymmetry; internal bias field; nonvolatile memory; pulse period; retention;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2042676
