DocumentCode :
1440826
Title :
Temperature Instability of Resistive Switching on 
-Based RRAM Devices
Author :
Fang, Z. ; Yu, H.Y. ; Liu, W.J. ; Wang, Z.R. ; Tran, X.A. ; Gao, B. ; Kang, J.F.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume :
31
Issue :
5
fYear :
2010
fDate :
5/1/2010 12:00:00 AM
Firstpage :
476
Lastpage :
478
Abstract :
In this letter, the temperature instability of HfOx -based resistive switching memory is investigated. It is observed that with the increase of high temperature (up to 100 ??C in this work), the leakage current of high-resistance state would increase, and the set/reset voltages would decrease. In addition, multibit switching exhibited at room temperature might not be retained with the increase of temperature. All these phenomena can be correlated with oxygen-vacancy-related trap formation and annihilation.
Keywords :
hafnium compounds; random-access storage; temperature control; HfOx; RRAM devices; high-resistance state; leakage current; oxygen-vacancy-related trap formation; resistive switching memory; set/reset voltages; temperature instability; Resistive random access memory (RRAM); resistive switching; temperature instability;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2041893
Filename :
5431007
Link To Document :
