• DocumentCode
    1440826
  • Title

    Temperature Instability of Resistive Switching on \\hbox {HfO}_{x} -Based RRAM Devices

  • Author

    Fang, Z. ; Yu, H.Y. ; Liu, W.J. ; Wang, Z.R. ; Tran, X.A. ; Gao, B. ; Kang, J.F.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • Volume
    31
  • Issue
    5
  • fYear
    2010
  • fDate
    5/1/2010 12:00:00 AM
  • Firstpage
    476
  • Lastpage
    478
  • Abstract
    In this letter, the temperature instability of HfOx -based resistive switching memory is investigated. It is observed that with the increase of high temperature (up to 100 ??C in this work), the leakage current of high-resistance state would increase, and the set/reset voltages would decrease. In addition, multibit switching exhibited at room temperature might not be retained with the increase of temperature. All these phenomena can be correlated with oxygen-vacancy-related trap formation and annihilation.
  • Keywords
    hafnium compounds; random-access storage; temperature control; HfOx; RRAM devices; high-resistance state; leakage current; oxygen-vacancy-related trap formation; resistive switching memory; set/reset voltages; temperature instability; Resistive random access memory (RRAM); resistive switching; temperature instability;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2041893
  • Filename
    5431007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1440826