Title :
High-Gain Multiple-Gate Photodetector With Nanowires in the Channel
Author :
Roudsari, Anita Fadavi ; Saini, Simarjeet S. ; Nixon, O. ; Anantram, M.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
fDate :
3/1/2011 12:00:00 AM
Abstract :
A design of a photodetector with multiple gates and a modified channel, incorporating silicon nanowires, is proposed, and its performance is modeled. Working under lateral bipolar action, the gate/channel geometry increases the device photocurrent in the accumulation mode and leads to photoresponsivities of greater than .
Keywords :
elemental semiconductors; nanowires; photoconductivity; photodetectors; semiconductor quantum wires; silicon; lateral bipolar action; multiple gate photodetector; photocurrent; photoresponsivities; silicon nanowires; Dark current; Logic gates; Nanowires; Photoconductivity; Phototransistors; Silicon; Lateral bipolar action; photodetector; photoresponsivity; silicon nanowire (NW);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2103044
