Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

Author

Bin Gao ; Zhang, Haowei ; Chen, Bing ; Liu, Lifeng ; Liu, Xiaoyan ; Han, Ruqi ; Kang, Jinfeng ; Fang, Zheng ; Yu, Hongyu ; Bin Yu ; Kwong, Dim-Lee

Author_Institution

Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China

Volume

32

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

276

Lastpage

278

Abstract

The retention failure of bipolar oxide-based resistive switching memory is investigated. A new physical model is proposed to elucidate the typical retention failure behavior of the oxide-based resistive switching memory with a sudden resistance transition, which is quite different from that of the traditional memories. In the new proposed model, the temperature- and bias-dependent failure probability and failure time of the devices can be quantified. A temperature- and voltage-acceleration method is developed to evaluate the retention of resistive switching memories.

Keywords

integrated circuit modelling; random-access storage; bias-dependent failure probability; bipolar oxide-based resistive switching memory; failure time; nonvolatile storage; resistance transition; retention failure; temperature-acceleration; temperature-dependent failure probability; voltage-acceleration; Electrical resistance measurement; Resistance; Stress measurement; Switches; Temperature measurement; Time measurement; Voltage measurement; Hafnium oxide; nonvolatile memory; resistive random access memory (RRAM); resistive switching; retention;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2102002

Filename

5706342