DocumentCode
1441178
Title
High-speed InAlAs/InGaAs heterojunction bipolar transistors
Author
Fukano, Hideki ; Kawamura, Yuichi ; Takanashi, Yoshifumi
Author_Institution
Opto-Electron. Labs., NTT, Kanagawa, Japan
Volume
9
Issue
6
fYear
1988
fDate
6/1/1988 12:00:00 AM
Firstpage
312
Lastpage
314
Abstract
InAlAs/InGaAs heterojunction bipolar transistors fabricated from wafers grown by molecular beam epitaxy are discussed. A cutoff frequency of 32 GHz for a collector current of 20 mA is achieved in the emitter area of devices 6*10 mu m/sup 2/. The use of heavily doped and nondoped InGaAs layers as the emitter cap and collector, respectively, results in a reduction of the emitter and collector charging times; this, in turn, leads to improved microwave performance.<>
Keywords
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; 20 mA; 32 GHz; charging times; heterojunction bipolar transistors; microwave performance; wafers grown by molecular beam epitaxy; Cutoff frequency; Electron mobility; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Microwave devices; Molecular beam epitaxial growth; Optical devices; Optical materials;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.727
Filename
727
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