DocumentCode :
1441229
Title :
A High-Yield 
-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration
Author :
Tran, X.A. ; Yu, H.Y. ; Yeo, Y.C. ; Wu, L. ; Liu, W.J. ; Wang, Z.R. ; Fang, Z. ; Pey, K.L. ; Sun, X.W. ; Du, A.Y. ; Nguyen, B.Y. ; Li, M.-F.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume :
32
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
396
Lastpage :
398
Abstract :
In this letter, a resistive random access memory based on Ni electrode/HfOx, dielectric/n+ Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high ON/OFF resistance ratio (>; 103), good retention characteristics (>; 105 s at 150 °C), satisfactory pulse switching endurance (>; 105 cycles), and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100% device yield on a 6-in wafer.
Keywords :
hafnium compounds; nickel; random-access storage; silicon; HfO; Ni; Si; Si-diode selector; crossbar architecture; programming speed; pulse switching endurance; resistive random access memory; unipolar resistive switching; Dielectrics; Electrodes; Nickel; Resistance; Silicon; Switches; Temperature measurement; $hbox{HfO}_{x}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2099205
Filename :
5706352
Link To Document :
