• DocumentCode
    1441280
  • Title

    Laser probing of bipolar amplification in 0.25-μm MOS/SOI transistors

  • Author

    Musseau, O. ; Ferlet-Cavrois, V. ; Pelloie, J.L. ; Buchner, S. ; McMorrow, D. ; Campbell, A.B.

  • Author_Institution
    CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
  • Volume
    47
  • Issue
    6
  • fYear
    2000
  • fDate
    12/1/2000 12:00:00 AM
  • Firstpage
    2196
  • Lastpage
    2203
  • Abstract
    The parasitic bipolar amplification in MOS/SOI transistors determines the SEU sensitivity of actual devices. This response is experimentally measured in a set of single transistors using a focused picosecond laser with submicrometer spatial resolution. This technique, validated by comparing the SEU behavior of registers irradiated with both laser and heavy ions, is relevant for both device physics and hardness assurance applications
  • Keywords
    MOSFET; amplification; ion beam effects; laser beam effects; radiation hardening (electronics); silicon-on-insulator; 0.25 micron; MOS/SOI transistor; SEU sensitivity; heavy ion irradiation; laser irradiation; parasitic bipolar amplification; radiation hardness; register; CMOS technology; Dielectrics; Doping; FETs; Isolation technology; Laboratories; Laser theory; MOS devices; MOSFETs; Space technology;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.903753
  • Filename
    903753
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1441280