• DocumentCode
    1441435
  • Title

    Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs

  • Author

    Saigné, F. ; Dusseau, L. ; Fesquet, J. ; Gasiot, J. ; Ecoffet, R. ; Schrimpf, R.D. ; Galloway, K.F.

  • Author_Institution
    Reims Univ., France
  • Volume
    47
  • Issue
    6
  • fYear
    2000
  • fDate
    12/1/2000 12:00:00 AM
  • Firstpage
    2329
  • Lastpage
    2333
  • Abstract
    In this paper, a procedure is proposed to predict the long-term behavior of commercial metal oxide semiconductor field effect transistors not only after irradiation, as previously published, but during irradiation at a given temperature. This procedure is validated on three different commercial power MOSFETs. In all three cases, the predicted and experimental results are in good agreement. The application of the procedure is discussed
  • Keywords
    annealing; gamma-ray effects; power MOSFET; oxide trapped charge; power MOSFET; radiation damage; thermal annealing; Annealing; Economic forecasting; Environmental economics; FETs; Helium; Lead compounds; MOSFETs; Power generation economics; Temperature dependence; Thermal degradation;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.903773
  • Filename
    903773
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1441435