DocumentCode :
1441455
Title :
Evaluation of accelerated total dose testing of linear bipolar circuits
Author :
Carrière, T. ; Ecoffet, R. ; Poirot, P.
Author_Institution :
ASTRIUM SAS, Velizy Villacoublay, France
Volume :
47
Issue :
6
fYear :
2000
fDate :
12/1/2000 12:00:00 AM
Firstpage :
2350
Lastpage :
2357
Abstract :
Different part types of linear bipolar technology were irradiated in order to evaluate the ability of accelerated total dose testing to describe the tolerance at very low dose rate. On all tested types, the bias current was the most sensitive parameter. Results confirm that elevated temperature irradiation performed at high dose rate is well adapted to define the tolerance of the bias current at very low dose rate. The best accelerated test conditions correspond to a dose rate of 0.55 rad/s and irradiation temperature of 100°C. However, such a procedure is not applicable to determine the behavior of the offset parameters at low dose rate
Keywords :
bipolar analogue integrated circuits; gamma-ray effects; integrated circuit testing; life testing; 100 C; accelerated total dose testing; bias current; elevated temperature irradiation; linear bipolar circuit; offset parameters; Annealing; Circuit testing; Degradation; Laboratories; Life estimation; Performance evaluation; Space charge; Space technology; Synthetic aperture sonar; Temperature sensors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.903776
Filename :
903776
Link To Document :
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