• DocumentCode
    1441476
  • Title

    The impact of single event gate rupture in linear devices

  • Author

    Lum, Gary K. ; O´Donnell, Hugh ; Boruta, Nicholas

  • Author_Institution
    Lockheed Martin Space Syst. Co., Sunnyvale, CA, USA
  • Volume
    47
  • Issue
    6
  • fYear
    2000
  • fDate
    12/1/2000 12:00:00 AM
  • Firstpage
    2373
  • Lastpage
    2379
  • Abstract
    A number of analog devices has exhibited permanent single event failure when exposed to heavy ions of LETs 26.6 MeV cm2/mg or higher. Single event gate rupture (SEGR) was uncovered to be the failure mode in several analog circuits using failure analysis tools and circuit modeling. A new approach to assessing the risk of SEGR for a system design will be presented which strongly depends on angles near normal incident and on the critical electric field where SEGR occurs
  • Keywords
    analogue integrated circuits; failure analysis; ion beam effects; analog circuit; circuit model; critical electric field; failure analysis; heavy ion irradiation; linear device; single event gate rupture; Analog circuits; Circuit testing; Dielectric devices; Failure analysis; Field programmable gate arrays; Gold; MOSFETs; Single event upset; System analysis and design; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.903779
  • Filename
    903779
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1441476