Title :
Angular dependence of DRAM upset susceptibility and implications for testing and analysis
Author :
Guertin, Steven M. ; Edmonds, Larry D. ; Swift, Gary M.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
Heavy ion irradiations of two types of commercial DRAM´s reveal unexpected angular responses. One device´s cross section varied by two orders of magnitude with azimuthal angle. Accurate prediction of space rates requires accommodating this effect
Keywords :
DRAM chips; integrated circuit testing; ion beam effects; space vehicle electronics; DRAM; angular dependence; cross-section; heavy ion irradiation; space vehicle electronics; testing; upset susceptibility; Azimuth; Azimuthal angle; Helium; Life estimation; Particle beams; Propulsion; Random access memory; Space missions; Space technology; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
