Title :
Application of laser testing in study of SEE mechanisms in 16-Mbit DRAMs
Author :
Duzellier, Sophie ; Falguére, Didier ; Guibert, Laurent ; Pouget, Vincent ; Fouillat, Pascal ; Ecoffet, Robert
Author_Institution :
ONERA-DESP, Toulouse, France
fDate :
12/1/2000 12:00:00 AM
Abstract :
A laser experiment has been carried out on the SMJ416400 and LUNA-E 16Mbit DRAMs in order to identify the mechanism leading to severe row/column errors. The error signatures observed with heavy ions are reproduced, related to physical locations on the die and the conditions of occurrence are studied (temporal behavior...). The question of laser to ion equivalence is discussed
Keywords :
DRAM chips; ion beam effects; laser beam effects; 16 Mbit; DRAM; LUNA-E; SMJ416400; error signature; heavy ion irradiation; laser testing; single event effect; Laser applications; Laser modes; Laser theory; Optical sensors; Particle beam optics; Protons; Random access memory; Shadow mapping; Solid state circuits; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
