DocumentCode
1441558
Title
Influence of temperature on dose rate laser simulation adequacy
Author
Skorobogatov, P.K. ; Nikiforov, A.Y. ; Demidov, A.A. ; Levin, V.V.
Author_Institution
Specialized Electron. Syst., Moscow, Russia
Volume
47
Issue
6
fYear
2000
fDate
12/1/2000 12:00:00 AM
Firstpage
2442
Lastpage
2446
Abstract
Temperature dependence of the equivalent dose rate in silicon integrated circuits (IC´s) under 1.06 μm laser irradiation is investigated. 2D-numerical modeling was carried out to analyze the temperature dependence of dose rate laser simulation adequacy in application to specialized test structures. Experimental validation was performed in the temperature range from 20 to 100°C
Keywords
circuit simulation; digital simulation; elemental semiconductors; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; laser beam effects; silicon; 1.06 micrometre; 20 to 100 degC; 2D-numerical modeling; IC radiation effects; Si; equivalent dose rate; laser irradiation; specialized test structures; temperature dependence; Analytical models; Application specific integrated circuits; Circuit simulation; Circuit testing; Integrated circuit modeling; Integrated circuit testing; Laser modes; Silicon; Temperature dependence; Temperature distribution;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.903790
Filename
903790
Link To Document