DocumentCode
1441583
Title
Displacement damage effects in InGaAs detectors: experimental results and semi-empirical model prediction
Author
Barde, S. ; Ecoffet, R. ; Costeraste, J. ; Meygret, A. ; Hugon, X.
Author_Institution
CNES, Toulouse, France
Volume
47
Issue
6
fYear
2000
fDate
12/1/2000 12:00:00 AM
Firstpage
2466
Lastpage
2472
Abstract
Proton irradiation results are presented for InGaAs multiplexed detector arrays used on the SPOT 4 satellite. Mean and extreme dark current values and random telegraph signal are analyzed and extreme dark current values are fitted with semiempirical models. Prediction of orbital behavior is in good agreement with flight data
Keywords
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared detectors; multiplexing; photodiodes; proton effects; remote sensing; semiconductor device models; III-V semiconductors; InGaAs; MIR detectors; SPOT 4 satellite; dark current values; displacement damage effects; flight data; multiplexed detector arrays; orbital behavior; photodiodes; proton irradiation results; random telegraph signal; semi-empirical model prediction; Dark current; Diodes; Electrons; Indium gallium arsenide; Infrared detectors; Photodiodes; Predictive models; Protons; Satellites; Telegraphy;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.903794
Filename
903794
Link To Document