DocumentCode
1441596
Title
Radiation effects in a CMOS active pixel sensor
Author
Hopkinson, Gordon R.
Author_Institution
Sira Electro-Opt. Ltd., Chislehurst, UK
Volume
47
Issue
6
fYear
2000
fDate
12/1/2000 12:00:00 AM
Firstpage
2480
Lastpage
2484
Abstract
A CMOS active pixel sensor has been evaluated with Co60, 10 MeV proton and heavy-ion irradiation. Permanent displacement damage effects were seen but total ionizing dose-induced dark current and increase in power supply current annealed at 100°C. Large changes in responsivity were seen after proton irradiation, which subsequently annealed. Mechanisms for these responsivity changes are discussed, but a definitive cause has not yet been established
Keywords
CMOS image sensors; dark conductivity; gamma-ray effects; ion beam effects; proton effects; 10 MeV; 100 degC; CMOS active pixel sensor; displacement damage effects; gamma irradiation; heavy-ion irradiation; power supply current; proton irradiation; responsivity; total ionizing dose-induced dark current; Annealing; Current supplies; Dark current; Ionizing radiation sensors; Manufacturing; Performance evaluation; Photodiodes; Protons; Radiation effects; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.903796
Filename
903796
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