DocumentCode
1441602
Title
Radiation-induced dark current in CMOS active pixel sensors
Author
Cohen, Muriel ; David, Jean-Pierre
Author_Institution
ONERA-CERT, Toulouse, France
Volume
47
Issue
6
fYear
2000
fDate
12/1/2000 12:00:00 AM
Firstpage
2485
Lastpage
2491
Abstract
Degradation behavior of CMOS active pixel sensors exposed to protons and cobalt 60 is presented. The most sensitive parameter is the dark current: the mean value of the degradation is always dominated by ionizing effects
Keywords
CMOS image sensors; dark conductivity; gamma-ray effects; proton effects; radiation hardening (electronics); space vehicle electronics; CMOS active pixel sensors; gamma-ray effects; hardness assurance; ionizing effects; photogate pixels; proton effects; radiation induced degradation; radiation-induced dark current; space applications; CMOS process; Circuits; Dark current; Detectors; Ionizing radiation sensors; Noise reduction; Photodiodes; Protons; Sensor phenomena and characterization; Thermal degradation;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.903797
Filename
903797
Link To Document