Title :
A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies
Author :
Zhang, Shiming ; Niu, Guofu ; Cressler, John D. ; Mathew, Suraj J. ; Gogineni, Usha ; Clark, Steven D. ; Zampardi, Peter ; Pierson, Richard L.
Author_Institution :
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
A comparison of the effects of gamma irradiation on silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and gallium-arsenide (GaAs) HBT technologies is reported, DC and radiofrequency (RF) performance as well as the low frequency noise are investigated for gamma doses up to 1 Mrad(Si). The results indicate that both SiGe and GaAs HBT technologies are tolerant to gamma irradiation
Keywords :
Ge-Si alloys; III-V semiconductors; gallium arsenide; gamma-ray effects; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device measurement; semiconductor device noise; semiconductor device reliability; semiconductor materials; 0 to 1 Mrad; DC performance; GaAs; HBT; RF performance; SiGe; gamma irradiation; low frequency noise; Doping profiles; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Microelectronics; Radio frequency; Silicon germanium; Space missions; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
