Title :
Analysis of radiation effects on individual DRAM cells
Author :
Scheick, Leif Z. ; Guertin, Steven M. ; Swift, Gary M.
fDate :
12/1/2000 12:00:00 AM
Abstract :
A novel way to measure the radiation characteristics of DRAM memory cells is presented. Radiation exposure tends to drive retention times lower for cells. The change in retention time (the time period required for a cell to upset without refreshing) is used to measure the effect of irradiation on the DRAM cells. Both the radiation response of a single DRAM cell and the response of all cells as a statistical whole are analyzed
Keywords :
DRAM chips; cellular arrays; integrated circuit reliability; radiation effects; DRAM cells; cell upset; radiation effects; radiation response; retention times; statistical whole; Aerospace electronics; Capacitors; Error correction; Ionizing radiation; Radiation effects; Random access memory; Single event upset; Testing; Time measurement; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
