DocumentCode
1441702
Title
Comparison of total dose effects on a voltage reference fabricated on bonded-wafer and polysilicon dielectric isolation
Author
Krieg, J.F. ; Neerman, C.J. ; Savage, M.W. ; Titus, J.L. ; Emily, D. ; Dunham, G.W. ; Van Vonno, N. ; Swonger, J.
Author_Institution
NAVSEA Surface Warfare Center Div., Crane, IN, USA
Volume
47
Issue
6
fYear
2000
fDate
12/1/2000 12:00:00 AM
Firstpage
2561
Lastpage
2567
Abstract
Voltage reference devices, fabricated with two different starting materials, were used as a test vehicle to compare the total dose response of polysilicon dielectric-isolation (Poly-DI) and bonded-wafer versions of a Radiation Hard Silicon Gate (RSG) BiCMOS process. Parts were exposed at 50, 10 and 0.08 rd(Si)/s
Keywords
BiCMOS integrated circuits; integrated circuit reliability; integrated circuit testing; isolation technology; radiation effects; radiation hardening (electronics); reference circuits; wafer bonding; BiCMOS process; Si; bonded-wafer material; polysilicon dielectric isolation; radiation hard silicon gate; test vehicle; total dose effects; voltage reference; BiCMOS integrated circuits; Dielectric materials; Geometry; Photonic band gap; Resistors; Semiconductor device packaging; Silicon; Vehicles; Voltage; Wafer bonding;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.903809
Filename
903809
Link To Document