• DocumentCode
    1441810
  • Title

    Calculation of heavy ion induced leakage current in n-MOSFETs

  • Author

    Loquet, Jean-Gabriel ; David, Jean-Pierre ; Briand, Renaud ; Fouillat, Pascal

  • Author_Institution
    ONERA-CERT, Toulouse, France
  • Volume
    47
  • Issue
    6
  • fYear
    2000
  • fDate
    12/1/2000 12:00:00 AM
  • Firstpage
    2656
  • Lastpage
    2661
  • Abstract
    This paper presents a new simulation method useful to describe heavy ion induced leakage current semi-permanent failure modes in n-MOSFETs, allowing thus to explain experimental results, and proposes to use it to forecast the sensitivity of future technologies for that specific failure mode
  • Keywords
    CMOS memory circuits; MOSFET; Poisson equation; SRAM chips; electron-hole recombination; ion beam effects; radiation hardening (electronics); semiconductor device models; space vehicle electronics; HI induced degradation; Poisson equation; SRAM; electron-hole recombination; failure mode sensitivity; heavy ion induced leakage current; initial ion track model; n-MOSFET; radiation hardness; semipermanent failure modes; simulation method; stuck bits; Degradation; Extrapolation; Leakage current; MOSFET circuits; Numerical simulation; Paper technology; Predictive models; Space technology; Technology forecasting; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.903822
  • Filename
    903822
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1441810